Vertical tunneling negative differential resistance devices

垂直隧穿负微分电阻器件

Abstract

The present disclosure relates to the fabrication of microelectronic devices having at least one negative differential resistance device formed therein. In at least one embodiment, the negative differential resistance devices may be formed utilizing quantum wells. Embodiments of negative differential resistance devices of present description may achieve high peak drive current to enable high performance and a high peak-to-valley current ratio to enable low power dissipation and noise margins, which allows for their use in logic and/or memory integrated circuitry.
本发明内容涉及微电子器件的制造,该微电子器件具有形成在其中的至少一个负微分电阻器件。在至少一个实施例中,可以利用量子阱来形成所述负微分电阻器件。本说明书的负微分电阻器件的实施例可以达到高的峰值驱动电流以实现高性能,并且可以达到高的峰谷电流比以实现低功耗和噪声容限,这允许它们用于逻辑和/或存储器集成电路。

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