Domain structure of silicon germanium heterojunction triode

锗硅异质结三极管的版图结构

Abstract

The invention discloses a domain structure of a silicon germanium heterojunction triode. In the domain of the heterojunction triode, a collector electrode, a base electrode, an emitter electrode, a base electrode and a collector electrode used as units are repeatedly arranged; and adjacent units share the collector electrode. With an array structure, the series resistance of the collector electrode is greatly reduced compared with the original array structure, so that the radio frequency performance of the heterojunction triode is improved.
本发明公开了一种低成本锗硅异质结三极管的版图结构,该异质结三极管版图以集电极、基极、发射极、基极和集电极为单元进行重复排列,相邻的单元共用集电极。通过这种阵列结构使集电极的串联电阻较原来的阵列结构大大减小,由此提高异质结三极管的射频性能。

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