Domain structure of silicon germanium heterojunction triode



The invention discloses a domain structure of a silicon germanium heterojunction triode. In the domain of the heterojunction triode, a collector electrode, a base electrode, an emitter electrode, a base electrode and a collector electrode used as units are repeatedly arranged; and adjacent units share the collector electrode. With an array structure, the series resistance of the collector electrode is greatly reduced compared with the original array structure, so that the radio frequency performance of the heterojunction triode is improved.




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